1 May 1996 Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers
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Optical Engineering, 35(5), (1996). doi:10.1117/1.600667
Abstract
Data are presented on buried-heterostructure (BH) AlGaAs/ GaAs and InGaAs/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperature liquid phase mesa melt etching and regrowth. The basic laser structures were grown by either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Native oxides were used as a mask in the processes of melt etching and regrowth. Measurements of excess mirror temperature and parameters of internal second-harmonic generation (SHG) were used for DL characterization. The equalization of beam divergence in both planes, perpendicular and parallel to the active layer, was accomplished by using cylindrical microlenses, at 1 W of radiant power in continuous-wave (cw) operation. The results on medical applications and pumping Er31-doped YAG crystals are reported.
Alexei V. Syrbu, Alexandru Z. Mereutza, Grigore I. Suruceanu, Vladimir P. Iacovlev, Andrei N. Caliman, Anatol T. Lupu, Stanislav T. Vieru, Marius Predescu, Ion M. Popescu, Radu G. Ispasoiu, "Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers," Optical Engineering 35(5), (1 May 1996). https://doi.org/10.1117/1.600667
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