1 June 1996 Laser ablation in a reactive atmosphere: application to the synthesis and deposition performance of titanium carbide thin films
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Optical Engineering, 35(6), (1996). doi:10.1117/1.600732
Abstract
We report the synthesis and deposition of Ti carbide thin layers by multipulse excimer laser ablation of Ti targets in CH4 at low ambient pressure (in the microbar range). The layers deposited on singlecrystalline Si wafers are characterized by optical microscopy, scanning electron microscopy, x-ray diffraction, photoelectron spectroscopy, and spectroscopic ellipsometry. We obtained deposition rates in the range 0.2 to 0.3 Å/pulse for a target-collector separation distance of 12.5 mm. The deposition parameters were found to be in good agreement with the predictions of the theoretical model based on the assumption of the adiabatic expansion of the plasma in the ambient gas.
Ion N. Mihailescu, Eniko Gyorgy, Mihai A. Popescu, Sebastian M. Csutak, Gheorghe Marin, Valentin S. Teodorescu, Ioan Ursu, Armando Luches, Maurizio Martino, Alessio Perrone, Joerg Hermann, "Laser ablation in a reactive atmosphere: application to the synthesis and deposition performance of titanium carbide thin films," Optical Engineering 35(6), (1 June 1996). http://dx.doi.org/10.1117/1.600732
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KEYWORDS
Titanium

Plasma

Laser ablation

Toxic industrial chemicals

Chemical species

Scanning electron microscopy

Silicon

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