1 September 1996 Characterization of homogeneous and inhomogeneous Si-based optical coatings deposited in dual-frequency plasma
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Abstract
Silicon-compound optical coatings (silicon nitride, dioxide, oxynitrides) were prepared by plasma-enhanced chemical vapor deposition (PECVD) at near-ambient substrate temperature from SiH4/N2O/NH3 mixtures, using a dual-mode microwave/radiofrequency plasma system. The refractive index profile of the films was adjusted with depth in two ways: (1) between 1.45 (SiO2) and 1.90 (SiN1.3) by varying the N2O/NH3 feed gas ratio, and (2) between 1.65 and 1.90 for SiN1.3 films, by increasing the energy of bombarding ions from 5 eV to 400 eV. The film composition was changed either abruptly (multilayers) or continuously (graded-index, inhomogeneous layers). The resulting optical properties are correlated with the depth profile analysis of the chemical composition, and with mechanical characteristics such as adhesion, stress, and scratch resistance.
Daniel Poitras, Pierre Leroux, Jolanta Ewa Klemberg-Sapieha, Subhash C. Gujrathi, Ludvik Martinu, "Characterization of homogeneous and inhomogeneous Si-based optical coatings deposited in dual-frequency plasma," Optical Engineering 35(9), (1 September 1996). https://doi.org/10.1117/1.600833 . Submission:
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