1 January 1997 Infrared reflection polarizers using uniform and Gaussian low-index layers buried in high-index substrates
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Abstract
The extinction ratio (ER) and the throughput or reflectance for the unextinguished s polarization (Rs ) are calculated for infrared reflection polarizers that consist of a low-index transparent layer embedded in a high-index transparent substrate. The dependence of ER and Rs on the depth and width of the buried layer is illustrated by iso-ER and iso-Rs contours for a specific SiO2-in-Si IR reflection polarizer that operates at 3.5-?m wavelength and 80-deg angle of incidence. The two cases of a uniform layer with sharp boundaries and a diffuse Gaussian layer are considered. The diffuse-layer model employs Bruggeman’s effectivemedium theory and is intended to simulate devices that are fabricated by the oxygen-ion implantation of Si. The effect of an outermost oxide film and the angular and wavelength sensitivities of these polarizers are determined.
Rasheed M. A. Azzam, Rasheed M. A. Azzam, Mostofa M. K. Howlader, Mostofa M. K. Howlader, } "Infrared reflection polarizers using uniform and Gaussian low-index layers buried in high-index substrates," Optical Engineering 36(1), (1 January 1997). https://doi.org/10.1117/1.601162 . Submission:
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