1 June 1997 Numerical simulation of photoelectrical characteristics of the spectrozonal three-channel bulk charge-coupled device
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Optical Engineering, 36(6), (1997). doi:10.1117/1.601364
Abstract
A one-dimensional physical model of a linear three-channel bulk charge-coupled device (BCCD) with a surface n channel and bulk channels of n- and p-type conductivity is considered. The system of three nonlinear differential equations describing the process of BCCD photorelaxation is obtained. On the basis of these equations, the numerical simulation of the process of photorelaxation under the influence of the absorption of optical radiation with uniform spectral intensity characteristic (0.4 ? ? ? 1.1?m) has been performed for a silicon three-channel BCCD. Spectral characteristics of the channel photosensitivities have been calculated, and the resulting selectivity of intrinsic radiation absorption is found. The maxima of spectral photosensitivity full at 0.5-, 0.67-, and 0.83-?m wavelength for the surface n channel and bulk n- and p-type channels respectively. Typical values of photorelaxation time are 1 to 0.6 ms at power density of absorbed radiation ? 100 ?W/cm2. The calculations have been performed for a three-cycle time diagram of the control voltage pulses of the following levels: upper level + 22 V, lower level + 2 V, and midlevel + 8 to 12 V. The results of simulation allow us to consider a three-channel silicon BCCD as a monocrystal spectrosonal photoelectrical image converter.
Vladimir I. Khainovskii, Valerii V. Uzdovskii, "Numerical simulation of photoelectrical characteristics of the spectrozonal three-channel bulk charge-coupled device," Optical Engineering 36(6), (1 June 1997). http://dx.doi.org/10.1117/1.601364
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KEYWORDS
Electrodes

Absorption

Silicon

Semiconductors

Numerical simulations

Charge-coupled devices

Channel projecting optics

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