1 October 1998 Dc drift reduction in LiNbO3 optical modulators by decreasing the water content of vacuum evaporation deposited SiO2 buffer layers
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Optical Engineering, 37(10), (1998). doi:10.1117/1.601824
Abstract
With increasing demand for LiNbO3 ~LN! optical intensity modulators for fiber communication systems, fine process control of LN device fabrication has become important to increase the fabrication yield and to supply low-priced modulators.
Hirotoshi Nagata, Masaru Shiroishi, Toshinari Kitanobo, Katsumi Ogura, "Dc drift reduction in LiNbO3 optical modulators by decreasing the water content of vacuum evaporation deposited SiO2 buffer layers," Optical Engineering 37(10), (1 October 1998). http://dx.doi.org/10.1117/1.601824
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KEYWORDS
Refractive index

Modulators

Semiconducting wafers

Silicon

Annealing

Ions

Solids

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