1 March 1998 Subpixel sensitivity map for a charge-coupled device
Author Affiliations +
Optical Engineering, 37(3), (1998). doi:10.1117/1.601788
Abstract
The sensitivity across a solid state detector array varies as a result of differences in transmission, diffusion and scattering properties over the sensor. This variation will occur over a range of scale lengths and its knowledge is of importance for improved device design and in a variety of applications, for example, event centroiding in photon counting systems. A measurement of the sensitivity variation on a subpixel scale for a two-phase front-illuminated CCD is reported. The measurement is made using a scanning reflection microscope. A variation in sensitivity between the phases within a pixel is clearly observed, as well as variations on a much smaller spatial scale.
Daniel Kavaldjiev, Zoran Ninkov, "Subpixel sensitivity map for a charge-coupled device," Optical Engineering 37(3), (1 March 1998). http://dx.doi.org/10.1117/1.601788
JOURNAL ARTICLE
7 PAGES


SHARE
KEYWORDS
Charge-coupled devices

Signal detection

Sensors

Point spread functions

CCD image sensors

Reflection

Reflectivity

Back to Top