Thomas F. Krauss California Institute of Technology (United Kingdom) Oskar J. Painter,Axel Scherer California Institute of Technology (United States) John Stuart Roberts Univ. of Sheffield (United Kingdom) Richard M. De La Rue Univ. of Glasgow (United Kingdom)
Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 ?m) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (Jth5220 A/cm2 for infinite cavity length) and internal loss (?=9±1 cm-1) are very low.