1 June 1998 Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector
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Optical Engineering, 37(6), (1998). doi:10.1117/1.601795
Abstract
A theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector is reported. The considerations are carried out for near-room temperature and 2.5-µm wavelength. The results show that the Auger mechanism can be suppressed by optimizing the material parameters. Thus, the performance of such detectors can be improved.
Yuan Tian, Tianming Zhou, BaoLin Zhang, Yixin Jin, Yongqiang Ning, Hong Jiang, Guang Yuan, "Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector," Optical Engineering 37(6), (1 June 1998). http://dx.doi.org/10.1117/1.601795
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KEYWORDS
Sensors

Gallium indium arsenide antimonide phosphide

Infrared detectors

Photovoltaics

Infrared sensors

Antimony

Diffusion

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