1 June 1998 Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector
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Abstract
A theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector is reported. The considerations are carried out for near-room temperature and 2.5-µm wavelength. The results show that the Auger mechanism can be suppressed by optimizing the material parameters. Thus, the performance of such detectors can be improved.
Yuan Tian, Yuan Tian, Tianming Zhou, Tianming Zhou, BaoLin Zhang, BaoLin Zhang, Yixin Jin, Yixin Jin, Yongqiang Ning, Yongqiang Ning, Hong Jiang, Hong Jiang, Guang Yuan, Guang Yuan, } "Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector," Optical Engineering 37(6), (1 June 1998). https://doi.org/10.1117/1.601795 . Submission:
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