1 July 1998 Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology
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Abstract
Scaled versions of a variety of silicon light-emitting diode elements (Si LEDs) have been realized using a standard 1.2-µm, doublepolysilicon, double-metal, n-well CMOS fabrication process. The devices operated with a n+p junction biased in the avalanche breakdown mode and were realized by using standard features of the ORBIT FORESIGHT design rules. The elements emit optical radiation in a broad band in the 450- to 850-nm range. An emitted intensity (radiant exitance) of up to 7.1 µW/cm2 (or about 8 nW per 60-µm-diam chip area) has been obtained with 5 mA of current at an operating voltage of 18.5 V. Excellent uniformity in emission intensity of better than 1% variation was obtained over areas as large as 100x500 µm. A best power conversion efficiency of 8.7x 10-8 and a quantum efficiency of 7.8x 10-7 were measured. All of these values are about one order of magnitude better than previously reported values for Si LED avalanche devices. Coupling between the elements as well as electro-optical coupling between an element and an optical fiber was realized.
Lukas Willem Snyman, Lukas Willem Snyman, Herzl Aharoni, Herzl Aharoni, Monuko du Plessis, Monuko du Plessis, Rudolph Barend Johannes Gouws, Rudolph Barend Johannes Gouws, } "Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology," Optical Engineering 37(7), (1 July 1998). https://doi.org/10.1117/1.601792 . Submission:
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