1 January 1999 Etching selectivity control during resist pattern transfer into silica for the fabrication of microlenses with reduced spherical aberrations
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Optical Engineering, 38(1), (1999). doi:10.1117/1.602069
Abstract
An effective technique for the fabrication of refractive microlens arrays in silica wafers relies on the transfer by reactive ion etching (RIE) of melted photoresist microlenses. Anisotropic RIE allows the modification of the transferred profile by changing the relative etch rate of silica and photoresist, accomplished through continuous adjustment of the etching-gas composition. Material etch rates may spontaneously vary during the transfer process although operative parameters are held unchanged. An accurate survey of the etching process has been carried out to observe the principal responses of etch-parameter variations and to elaborate a procedure to adapt microlens shaping to the most severe requirements.
Marco Severi, Patrick Louis Mottier, "Etching selectivity control during resist pattern transfer into silica for the fabrication of microlenses with reduced spherical aberrations," Optical Engineering 38(1), (1 January 1999). http://dx.doi.org/10.1117/1.602069
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KEYWORDS
Etching

Microlens

Silica

Photoresist materials

Reactive ion etching

Semiconducting wafers

Plasma

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