1 March 2000 Design approach and comparison of projection cameras for EUV lithography
Author Affiliations +
Optical Engineering, 39(3), (2000). doi:10.1117/1.602429
Abstract
This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of fourmirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings
Scott A. Lerner, Jose M. Sasian, Michael R. Descour, "Design approach and comparison of projection cameras for EUV lithography," Optical Engineering 39(3), (1 March 2000). http://dx.doi.org/10.1117/1.602429
JOURNAL ARTICLE
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KEYWORDS
Mirrors

Cameras

Multilayers

Extreme ultraviolet lithography

Optical coatings

Semiconducting wafers

Aspheric lenses

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