Design approach and comparison of projection cameras for EUV lithography

Scott A. Lerner; Jose M. Sasian; Michael R. Descour

doi:10.1117/1.602429

1 March 2000 Design approach and comparison of projection cameras for EUV lithography

Scott A. Lerner; Jose M. Sasian; Michael R. Descour

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Optical Engineering, 39(3), (2000). doi:10.1117/1.602429

Abstract

This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of fourmirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings

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Scott A. Lerner, Jose M. Sasian, Michael R. Descour, "Design approach and comparison of projection cameras for EUV lithography," Optical Engineering 39(3), (1 March 2000). https://doi.org/10.1117/1.602429

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