1 October 2001 Optical NOR gate based on silicon technology
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Optical Engineering, 40(10), (2001). doi:10.1117/1.1403741
Abstract
An optoelectronic integrated device that carries out digital optical functions is designed in silicon technology. The device achieves the NOR gate, which has input and output optical signals, and is designed to detect and emit a 600-nm-wavelength light. The active detection area is 1 mm2, and it can achieve frequencies of the order of megahertz.
Alfonso Torres-Jacome, Francisco-J. Renero-Carrillo, Alicia Vera-Marquina, "Optical NOR gate based on silicon technology," Optical Engineering 40(10), (1 October 2001). http://dx.doi.org/10.1117/1.1403741
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KEYWORDS
Photodetectors

Silicon

Integrated optics

Light emitting diodes

Optoelectronic devices

Data processing

Silicon carbide

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