1 October 2001 Optical NOR gate based on silicon technology
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Abstract
An optoelectronic integrated device that carries out digital optical functions is designed in silicon technology. The device achieves the NOR gate, which has input and output optical signals, and is designed to detect and emit a 600-nm-wavelength light. The active detection area is 1 mm2, and it can achieve frequencies of the order of megahertz.
© (2001) Society of Photo-Optical Instrumentation Engineers (SPIE)
Alfonso Torres-Jacome, Alfonso Torres-Jacome, Francisco-J. Renero-Carrillo, Francisco-J. Renero-Carrillo, Alicia Vera-Marquina, Alicia Vera-Marquina, } "Optical NOR gate based on silicon technology," Optical Engineering 40(10), (1 October 2001). https://doi.org/10.1117/1.1403741 . Submission:
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