1 December 2001 Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications
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Abstract
We present full-scale calculations of highly p-type doped siGe heterojunction internal photoemission (Hip) detectors that operate in the mid-infrared (3- to 5-?m) range of wavelength. We explore the effects of including undoped spacer layers within the highly doped siGe wells, for which a systematic body of experimental data is available to us, and which demonstrates a substantial reduction in the dark current produced by these devices. We model the doping explicitly by means of a screened Coulomb potential, leading to a full description of the resultant impurity band, and compare our calculated optical line shapes with recent state-of-the-art molecular-beam epitaxy experiments. The variation of the optical response with well width, germanium concentration, spacer width and position, and doping concentration are all considered.
Elizabeth A. Corbin, Michael J. Shaw, Matt R. Kitchin, Milan Jaros, Johannes Konle, Hartmut Presting, "Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications," Optical Engineering 40(12), (1 December 2001). https://doi.org/10.1117/1.1416695
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