1 June 2001 Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg miror
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Optical Engineering, 40(6), (2001). doi:10.1117/1.1369143
Abstract
We describe the operating principle of a silicon optoelectronic modulator based on the plasma dispersion effect used in conjunction with a distributed Bragg reflector, which converts the phase shift, induced by the free carriers injected by a P-i-N diode, into variations of its reflectivity. The device is integrated in a low-loss silicon-on-insulator waveguide. Two different approaches in the driving schemes are proposed. Moreover, we show how it is possible to reach a theoretical l0o% modulation depth by exploiting in a concurrent way both the variations of the refractive index and the increased optical absorption. An exhaustive description of the optical structure and its guiding properties, together with the analysis of the electrical behavior of the modulator, is given. Finally, a comparison with other interferometric structures is analyzed, and it is shown how this kind of modulator exhibits satisfactory characteristics in terms of dissipated power and reduced occupation of area on a chip.
Giuseppe Coppola, Andrea Irace, Mario Iodice, Antonello Cutolo, "Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg miror," Optical Engineering 40(6), (1 June 2001). http://dx.doi.org/10.1117/1.1369143
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KEYWORDS
Modulators

Modulation

Mirrors

Silicon

Waveguides

Diodes

Refractive index

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