1 June 2001 X-cut LiNbO3 optoelectronic device passivated by silicon nitride film
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Optical Engineering, 40(6), (2001). doi:10.1117/1.1367257
Abstract
Silicon nitride (Si3N4) passivation was attempted on x-cut LiNbO3 10-Gb/s optical integrated modulators. Although silicon nitride films are commonly used to chemically protect semiconductor device surfaces,1 to our knowledge, applicability of the film to rf optoelectronic devices such as high-speed LiNbO3 modulators has not been reported. The purpose of our investigation is to confirm that the silicon nitride passivation films do not degrade the electro-optic (EO) characteristics and bias-drift performance of LiNbO3 modulators.
Futoshi Yamamoto, Yasuyuki Miyama, Hirotoshi Nagata, Masumi Tamai, "X-cut LiNbO3 optoelectronic device passivated by silicon nitride film," Optical Engineering 40(6), (1 June 2001). http://dx.doi.org/10.1117/1.1367257
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KEYWORDS
Silicon

Modulators

Silicon films

Electrodes

Semiconducting wafers

Gold

Optoelectronic devices

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