1 July 2001 Fabrication of a waveguiding layer in Teflon AF by ion irradiation
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The modification of thin Teflon AF® films by He+ ion irradiation was investigated. As an integrated optical measurement technique, leaky-mode spectroscopy has been applied, and an increase of ?n = 8 x 10-3 for the real part of the refractive index has been found in the irradiated surface region of the film. The irradiated films can be regarded as a bilayer system consisting of a layer with low refractive index and a layer with high refractive index. The latter can be used as an optical waveguide with a substrate of unmodified Teflon AF. In addition, a decrease of the initial film thickness, an increase in UV absorption, and no significant increase in absorption of near-infrared light were found.
© (2001) Society of Photo-Optical Instrumentation Engineers (SPIE)
Markus Leitz, Markus Leitz, R. P. Podgorsek, R. P. Podgorsek, Hilmar Franke, Hilmar Franke, Daniel Hernandez Cruz, Daniel Hernandez Cruz, Emile J. Knystautas, Emile J. Knystautas, Roger A. Lessard, Roger A. Lessard, } "Fabrication of a waveguiding layer in Teflon AF by ion irradiation," Optical Engineering 40(7), (1 July 2001). https://doi.org/10.1117/1.1385331 . Submission:

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