1 August 2001 Electro-optic intensity modulators at lambda=1.5 um utilizing strain-optic effects in LiNbO3
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Abstract
Electro-optic intensity modulators at ? = 1.55 ?m are produced in LiNbO3 substrates using strain-induced channel waveguides formed by magnetron deposition of a surface metal film and lift-off technology. The static strain resulting from thermal expansion mismatch between the substrate and the metal film that is caused by the plasma temperature during deposition induces a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a ?-rad voltage of 16.1 V is demonstrated. Electro-optic modulation behaviors in channel waveguides fabricated using strain inducing surface metal film are compared to ones formed by thick SiO2 surface film.
© (2001) Society of Photo-Optical Instrumentation Engineers (SPIE)
Hong-Sik S. Jung, Hong-Sik S. Jung, O. Eknoyan, O. Eknoyan, Henry F. Taylor, Henry F. Taylor, } "Electro-optic intensity modulators at lambda=1.5 um utilizing strain-optic effects in LiNbO3," Optical Engineering 40(8), (1 August 2001). https://doi.org/10.1117/1.1386369 . Submission:
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