1 August 2001 Electro-optic intensity modulators at lambda=1.5 um utilizing strain-optic effects in LiNbO3
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Optical Engineering, 40(8), (2001). doi:10.1117/1.1386369
Abstract
Electro-optic intensity modulators at ? = 1.55 ?m are produced in LiNbO3 substrates using strain-induced channel waveguides formed by magnetron deposition of a surface metal film and lift-off technology. The static strain resulting from thermal expansion mismatch between the substrate and the metal film that is caused by the plasma temperature during deposition induces a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a ?-rad voltage of 16.1 V is demonstrated. Electro-optic modulation behaviors in channel waveguides fabricated using strain inducing surface metal film are compared to ones formed by thick SiO2 surface film.
Hong-Sik S. Jung, O. Eknoyan, Henry F. Taylor, "Electro-optic intensity modulators at lambda=1.5 um utilizing strain-optic effects in LiNbO3," Optical Engineering 40(8), (1 August 2001). http://dx.doi.org/10.1117/1.1386369
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KEYWORDS
Waveguides

Metals

Modulation

Electro optics

Channel waveguides

Modulators

Electrooptic modulators

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