1 January 2002 Photoacoustic studies on n-type InP
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Optical Engineering, 41(1), (2002). doi:10.1117/1.1419023
Abstract
We discuss an open photoacoustic cell study on sulfer-doped n-type InP wafer. The thermal diffusivity of the sample is evaluated from the phase data associated with the photoacoustic signal as a function of the modulation frequency under heat transmission configuration. Analysis is made on the basis of the Rosencwaig-Gersho theory and the results are compared with those from earlier reported photoacoustic studies of semiconductors. Our investigation clearly indicates that the instantaneous thermalization process is the major heat diffusion mechanism responsible for the photoacoustic signal generation in an InP sample.
Nibu A. George, C. P. G. Vallabhan, V. P. N. Nampoori, Periasamy Radhakrishnan, "Photoacoustic studies on n-type InP," Optical Engineering 41(1), (1 January 2002). https://doi.org/10.1117/1.1419023
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KEYWORDS
Photoacoustic spectroscopy

Semiconductors

Modulation

Signal detection

Optical proximity correction

Diffusion

Phase shift keying

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