1 October 2002 Two different lasers integrated in a monochip by one-step epitaxy
Author Affiliations +
Abstract
A new way to integrate two different lasers (LD1: 950 nm and LD2: 990 nm) in a monochip by one-step epitaxial growth is presented. These two lasers are cascaded by a high-doping tunnel junction that separates the two active regions so that a four-terminal device can be implemented, which permits the operation of the lasers electrically independent as LD1, LD2, and LD1+LD2 after fabrication process. High power dual-wavelength operation laser diodes are fabricated, output power as high as 3.1 W at 3 A and 2.4 W at 2 A is obtained, and the slope efficiency can reach 1.38 W/A. As for four-terminal integrated laser diodes, the threshold current is 54, 58, and 65 mA, and the slope efficiency is 0.73, 0.48, and 0.37 for the LD1+LD2, LD1, and LD2, respectively.
© (2002) Society of Photo-Optical Instrumentation Engineers (SPIE)
WeiLing Guo, WeiLing Guo, Guangdi Shen, Guangdi Shen, Jianjun Li, Jianjun Li, Ying Ding, Ying Ding, Ying Liu, Ying Liu, Guo Gao, Guo Gao, Deshu Zou, Deshu Zou, } "Two different lasers integrated in a monochip by one-step epitaxy," Optical Engineering 41(10), (1 October 2002). https://doi.org/10.1117/1.1506372 . Submission:
JOURNAL ARTICLE
2 PAGES


SHARE
RELATED CONTENT


Back to Top