1 April 2002 In-situ ER-doped GaN optical storage devices using high-resolution focused ion beam milling
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Abstract
High-density GaN:Er optical storage devices were fabricated with focused ion beam (FIB) milling techniques. In-situ Er-doped GaN films (1-1.5 ?m thick) were grown on Si substrates. To "write" a bit, the GaN:Er film was selectively milled with a 30-keV Ga+ FIB. Data retrieval is accomplished by upconversion emission at 535/556 nm upon 1-xm IR laser stimulation. Regions where the Er- doped GaN layer is completely removed (and do not emit) are defined as logic "0," while regions that are not milled (and do emit) are defined as logic "1." Data patterns with submicron bit size (or 100 Mb/cm2 density) have been fabricated by FIB milling. Data written by this approach has a theoretical storage capacity approaching 10 Gbits/cm2.
© (2002) Society of Photo-Optical Instrumentation Engineers (SPIE)
Boon Kwee Lee, Boon Kwee Lee, Chih-Jen Chi, Chih-Jen Chi, Irving Chyr, Irving Chyr, Dong-Seon Lee, Dong-Seon Lee, Fred Richard Beyette, Fred Richard Beyette, Andrew J. Steckl, Andrew J. Steckl, } "In-situ ER-doped GaN optical storage devices using high-resolution focused ion beam milling," Optical Engineering 41(4), (1 April 2002). https://doi.org/10.1117/1.1461833 . Submission:
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