1 January 2003 Fabrication of far-infrared photodetector based on InAs/GaAs quantum dot superlattices
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Optical Engineering, 42(1), (2003). doi:10.1117/1.1525277
Abstract
A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm–1). The electrical characteristic of the device's current-voltage response is 63 μA at –1-V bias voltage when a 1-cd light source is at 15-cm distance.
Yi-Chang Cheng, San-Te Ching-Ming Yang, Jyh-Neng Yang, Wen-Hou Lan, Liann-Be Chang, Li-Zen Hsieh, "Fabrication of far-infrared photodetector based on InAs/GaAs quantum dot superlattices," Optical Engineering 42(1), (1 January 2003). http://dx.doi.org/10.1117/1.1525277
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KEYWORDS
Superlattices

Photodetectors

FT-IR spectroscopy

Gallium arsenide

Absorption

Indium arsenide

Quantum dots

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