1 November 2003 Ultrafast laser-induced crystallization of amorphous silicon films
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Abstract
Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.
© (2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Tae Y. Choi, Tae Y. Choi, David J. Hwang, David J. Hwang, Constantine P. Grigoropoulos, Constantine P. Grigoropoulos, } "Ultrafast laser-induced crystallization of amorphous silicon films," Optical Engineering 42(11), (1 November 2003). https://doi.org/10.1117/1.1617312 . Submission:
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