1 December 2003 Third-generation infrared photon detectors
Author Affiliations +
Abstract
Hitherto, two families of multielement detectors have been used for IR applications: scanning systems (first generation) and staring systems (second generation). Third-generation systems are being developed nowadays. In the common understanding, third-generation IR systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolor functionality and other on-chip functions. In the paper, issues associated with the development and exploitation of third-generation IR photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum-well photoconductors, are considered. The main challenges facing multicolor devices concern complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. Also, technical developments that are key to third-generation devices, such as vapor phase epitaxy and advanced readout concepts, are discussed.
© (2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Antoni Rogalski, Antoni Rogalski, "Third-generation infrared photon detectors," Optical Engineering 42(12), (1 December 2003). https://doi.org/10.1117/1.1625377 . Submission:
JOURNAL ARTICLE
19 PAGES


SHARE
RELATED CONTENT

Choosing detectors for third-generation infrared systems
Proceedings of SPIE (January 22 2003)
Silicon infrared focal plane arrays
Proceedings of SPIE (June 11 2001)
SOFRADIR IR detectors for LW applications
Proceedings of SPIE (February 18 2004)
Status of infrared detectors
Proceedings of SPIE (July 21 1998)
2X64 linear LWIR arrays based in HgCdTe MBE grown layers...
Proceedings of SPIE (February 21 2001)

Back to Top