1 April 2003 Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor
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Optical Engineering, 42(4), (2003). doi:10.1117/1.1557693
Abstract
We present a theoretical analysis of the noise behavior of a heterojunction bipolar transistor (HBT) used as a three terminal (3T) photodetector. The use of a HBT in the photodetector mode can greatly simplify the fabrication of HBT-based optical receivers in the monolithic form. The present model takes into account the effect of the received light on the intrinsic parameters and various noise components of the HBT when used as a detector. The model enables one to determine the signal-to-noise ratio at the output and also the noise equivalent power of the HBT. The model has been applied for characterization of an InP/InGaAs HBT used as a 3T photodetector in the 1.55-μm wavelength region.
P. Chakrabarti, Naveen Agrawal, Pankaj Kalra, Shishir Agrawal, Gaurav Gupta, "Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor," Optical Engineering 42(4), (1 April 2003). http://dx.doi.org/10.1117/1.1557693
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KEYWORDS
Signal to noise ratio

Photodetectors

Resistance

Heterojunctions

Receivers

Photonic integrated circuits

Sensors

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