1 April 2003 In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy
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Abstract
We present the in situ optical analysis of the active layers in a vertical-cavity surface-emitting laser structure with a GaInP/AlGaInP core at room temperature. To penetrate the high number of AlAs and AlGaAs Bragg mirrors, two-photon spectroscopy is employed to determine the characteristics of the cavity and specifically the emissive layer for a variety of excited electron-hole pair concentrations in the range of 5×1017 to 6×1019 cm–3. It is found that many body effects due to optical doping lower the emission wavelengths of the devices. The shift is equivalent for several different structures and the effect is therefore assigned to the active zone. Furthermore, it is demonstrated that the emission wavelength of the lasers considerably depends on the detection angle.
© (2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Bruno Ullrich, Bruno Ullrich, R. Schroeder, R. Schroeder, A. Knigge, A. Knigge, M. Zorn, M. Zorn, Marcus Weyers, Marcus Weyers, } "In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy," Optical Engineering 42(4), (1 April 2003). https://doi.org/10.1117/1.1557173 . Submission:
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