1 July 2003 Theoretical analysis of Si1–x–yGexCy near-infrared photodetectors
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Optical Engineering, 42(7), (2003). doi:10.1117/1.1578085
Abstract
A near-infrared waveguide photodetector in a Si-based ternary Si1–x–yGexCy alloy is analyzed theoretically and the simulation results are obtained for 0.85- to 1.06-μm wavelength fiber optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si0.79Ge0.2C0.01 and Si0.70Ge0.28C0.02 are designed. The active absorption layer has a thickness of 120 to 450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 μm.
Baojun Li, Soojin Chua, Eugene A. Fitzgerald, "Theoretical analysis of Si1–x–yGexCy near-infrared photodetectors," Optical Engineering 42(7), (1 July 2003). http://dx.doi.org/10.1117/1.1578085
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