1 September 2003 Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics
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Optical Engineering, 42(9), (2003). doi:10.1117/1.1598962
Abstract
The effect of wavelength of illumination on the trap occupancy of an optically biased GaN metal-semiconductor field effect transistor (MESFET) for its improved electrical characteristics is presented. The model evaluates the Id to Vd characteristics and transconductance of the device for the cases of light turning both on and off at a reference time t = 0. The photovoltaic effect across the Schottky junction and the depletion width modulation in the active layer are taken into account along with the gate-length modulation and parasitic source and drain resistances. It is shown that the trap-related degradation of the drain characteristics could be overcome when the device is used under illumination with light acting as a dual gate.
Adarsh Singh, Mridula Gupta, R.S. Gupta, "Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics," Optical Engineering 42(9), (1 September 2003). http://dx.doi.org/10.1117/1.1598962
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KEYWORDS
Field effect transistors

Gallium nitride

Illumination engineering

Modulation

Instrument modeling

Channel projecting optics

Metals

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