Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array

Ching-Cherng Sun; Chao-Ying Lin; Tsung-Xian Lee; Tsung-Hsun Yang

doi:10.1117/1.1768943

1 August 2004 Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array

Ching-Cherng Sun, Chao-Ying Lin, Tsung-Xian Lee, Tsung-Hsun Yang

Author Affiliations +

Optical Engineering, Vol. 43, Issue 8, (August 2004). https://doi.org/10.1117/1.1768943

Abstract

An optical model for simulating light extraction efficiency of a GaN-based LED chip is presented. We propose the introduction of a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 78% light extraction efficiency.

©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Ching-Cherng Sun, Chao-Ying Lin, Tsung-Xian Lee, and Tsung-Hsun Yang "Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array," Optical Engineering 43(8), (1 August 2004). https://doi.org/10.1117/1.1768943

Published: 1 August 2004

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