1 October 2004 Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications
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Optical Engineering, 43(10), (2004). doi:10.1117/1.1786939
Abstract
A linear 128-photosensor array in a complimentary metal-oxide semiconductor (CMOS) standard technology is presented. The characteristics of the pixels are high voltage at the output in the range of 0 to 3.5 V and a pixel memory with the possibility of multiple readouts without significant degradation of information. The ASIC also includes a selection logic to select the pixel to be read. Using this CMOS photodetector array, we also present a low-cost prototype for the distance measurement and 3-D reconstruction of near and small objects, where the optical triangulation method used is appropriate. Good acquisition results are obtained in the experimental test.
Gemma Hornero, Mauricio Moreno, R. Meri, Enric Montane-Borras, Atila Herms, "Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications," Optical Engineering 43(10), (1 October 2004). https://doi.org/10.1117/1.1786939
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