1 October 2004 Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications
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Abstract
A linear 128-photosensor array in a complimentary metal-oxide semiconductor (CMOS) standard technology is presented. The characteristics of the pixels are high voltage at the output in the range of 0 to 3.5 V and a pixel memory with the possibility of multiple readouts without significant degradation of information. The ASIC also includes a selection logic to select the pixel to be read. Using this CMOS photodetector array, we also present a low-cost prototype for the distance measurement and 3-D reconstruction of near and small objects, where the optical triangulation method used is appropriate. Good acquisition results are obtained in the experimental test.
© (2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Gemma Hornero, Gemma Hornero, Mauricio Moreno, Mauricio Moreno, R. Meri, R. Meri, Enric Montane-Borras, Enric Montane-Borras, Atila Herms, Atila Herms, } "Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications," Optical Engineering 43(10), (1 October 2004). https://doi.org/10.1117/1.1786939 . Submission:
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