1 December 2004 High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers
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Optical Engineering, 43(12), (2004). doi:10.1117/1.1814361
Abstract
We investigate the bandwidth limitations and the analog modulation characteristics at microwave frequencies (0.1 to 10 GHz) of a low-capacitance oxide-confined 670-nm InGaAlP vertical-cavity surface-emitting laser (VCSEL). A maximum modulation bandwidth of 6.3 GHz, limited by thermal effects, is achieved. From measurements of distortion and noise, a spurious free dynamic range (SFDR) of 100 dB Hz2/3 is obtained at frequencies up to 2 GHz, rendering such VCSELs useful for transmission of analog signals. At higher frequencies, the SFDR drops due to the thermally limited resonance frequency.
Christina Carlsson, Peter Modh, John Halonen, Richard Schatz, Anders G. Larsson, "High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers," Optical Engineering 43(12), (1 December 2004). http://dx.doi.org/10.1117/1.1814361
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KEYWORDS
Vertical cavity surface emitting lasers

Modulation

Analog modulation

Thermal effects

Distortion

Aluminium gallium indium phosphide

Oxides

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