1 May 2004 Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range
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Optical Engineering, 43(5), (2004). doi:10.1117/1.1695566
Abstract
Optical and electrical characteristics of InGaSb p-n photodetectors are presented at different temperatures. The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 µm, equivalent to 58% quantum efficiency, with 2.3-µm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×1010 cm Hz1/2/W indicating that InGaSb is a superior material for 2-µm detection applications.
Tamer F. Refaat, M. Nurul Abedin, Ishwara B. Bhat, Partha S. Dutta, Upendra N. Singh, "Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range," Optical Engineering 43(5), (1 May 2004). http://dx.doi.org/10.1117/1.1695566
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KEYWORDS
Gallium antimonide

Photodetectors

Photodiodes

Sensors

Quantum efficiency

Temperature metrology

Metals

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