1 May 2004 Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range
Author Affiliations +
Optical and electrical characteristics of InGaSb p-n photodetectors are presented at different temperatures. The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 µm, equivalent to 58% quantum efficiency, with 2.3-µm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×1010 cm Hz1/2/W indicating that InGaSb is a superior material for 2-µm detection applications.
© (2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Tamer F. Refaat, Tamer F. Refaat, M. Nurul Abedin, M. Nurul Abedin, Ishwara B. Bhat, Ishwara B. Bhat, Partha S. Dutta, Partha S. Dutta, Upendra N. Singh, Upendra N. Singh, } "Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range," Optical Engineering 43(5), (1 May 2004). https://doi.org/10.1117/1.1695566 . Submission:


Reliability of long wavelength lasers and photodetectors
Proceedings of SPIE (September 08 1993)
Large-area low-jitter silicon single photon avalanche diodes
Proceedings of SPIE (February 01 2008)
Progress in MBE grown type-II superlattice photodiodes
Proceedings of SPIE (May 17 2006)
Large-area high-speed InGaAs photodetectors
Proceedings of SPIE (April 16 2008)

Back to Top