1 May 2004 Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range
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Abstract
Optical and electrical characteristics of InGaSb p-n photodetectors are presented at different temperatures. The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 µm, equivalent to 58% quantum efficiency, with 2.3-µm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×1010 cm Hz1/2/W indicating that InGaSb is a superior material for 2-µm detection applications.
© (2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Tamer F. Refaat, Tamer F. Refaat, M. Nurul Abedin, M. Nurul Abedin, Ishwara B. Bhat, Ishwara B. Bhat, Partha S. Dutta, Partha S. Dutta, Upendra N. Singh, Upendra N. Singh, "Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range," Optical Engineering 43(5), (1 May 2004). https://doi.org/10.1117/1.1695566 . Submission:
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