1 August 2004 Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array
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Optical Engineering, 43(8), (2004). doi:10.1117/1.1768943
Abstract
An optical model for simulating light extraction efficiency of a GaN-based LED chip is presented. We propose the introduction of a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 78% light extraction efficiency.
Ching-Cherng Sun, Chao-Ying Lin, Tsung-Xian Lee, Tsung-Hsun Yang, "Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array," Optical Engineering 43(8), (1 August 2004). https://doi.org/10.1117/1.1768943
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