1 September 2004 Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells
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Abstract
A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current.
© (2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
Shurong Wang, Shurong Wang, Hongliang Zhu, Hongliang Zhu, Baojun Wang, Baojun Wang, Zhihong Liu, Zhihong Liu, Ying Ding, Ying Ding, Lingjuan Zhao, Lingjuan Zhao, Fan Zhou, Fan Zhou, Lufeng Wang, Lufeng Wang, Wei Wang, Wei Wang, } "Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells," Optical Engineering 43(9), (1 September 2004). https://doi.org/10.1117/1.1777587 . Submission:
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