1 September 2004 Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells
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Optical Engineering, 43(9), (2004). doi:10.1117/1.1777587
Abstract
A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current.
Shurong Wang, Hongliang Zhu, Baojun Wang, Zhihong Liu, Ying Ding, Lingjuan Zhao, Fan Zhou, Lufeng Wang, Wei Wang, "Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells," Optical Engineering 43(9), (1 September 2004). http://dx.doi.org/10.1117/1.1777587
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KEYWORDS
Indium gallium arsenide

Polarization

Semiconductor optical amplifiers

Quantum wells

Gallium

L band

Arsenic

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