1 November 2005 Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate
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Abstract
In this research, experiments and optical simulations are carried out to study the effect of beveled sidewalls and geometric shapes on the light extraction efficiency of a GaN light-emitting diode (LED) with sapphire substrate. In addition to the conventional rectangular chips, hexagonal chips are experimentally processed for the first time on a novel island-like GaN substrate, on which the beveled sidewalls are naturally formed at each island during GaN epitaxial growth on a sapphire original substrate by hydride vapor phase epitaxy (HVPE) technology. The results from our simulations and experiments show that the output power of a LED with beveled sidewalls is about two times that of a normal LED, and those from hexagonal chips are always better than those from conventional rectangular chips.
© (2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jung-Tsung Hsu, Jung-Tsung Hsu, W. Y. Yeh, W. Y. Yeh, ChangCheng Chuo, ChangCheng Chuo, Jenq-Dar Tsay, Jenq-Dar Tsay, C. S. Huang, C. S. Huang, C. Y. Lin, C. Y. Lin, } "Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate," Optical Engineering 44(11), 111304 (1 November 2005). https://doi.org/10.1117/1.2131049 . Submission:
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