1 February 2005 Ellipsometry on optically thin palladium films on silicon-based substrate: effects of low concentration of hydrogen
Author Affiliations +
Optical Engineering, 44(2), 023802 (2005). doi:10.1117/1.1840955
Abstract
Optically thin palladium films evaporated on silicon substrates are investigated following exposure to low concentrations of hydrogen gas in nitrogen using spectroscopic ellipsometry. Changes in the parameters tan Ψ and cos Δ are observed for concentrations as low as 0.01% hydrogen in nitrogen. A nonlinear behavior of the change in the ellipsometry parameters as a function of hydrogen concentration is demonstrated, with saturation occurring at a flow of 0.05% hydrogen in nitrogen.
Emmanouil Lioudakis, Andreas Othonos, "Ellipsometry on optically thin palladium films on silicon-based substrate: effects of low concentration of hydrogen," Optical Engineering 44(2), 023802 (1 February 2005). https://doi.org/10.1117/1.1840955
JOURNAL ARTICLE
4 PAGES


SHARE
Back to Top