1 February 2005 Realization of selective low emittance in both thermal atmospheric windows
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Optical Engineering, 44(2), 026001 (2005). doi:10.1117/1.1839887
Abstract
The infrared reflectance and emittance of a double layer of silicon and silicon dioxide have been investigated by optical multilayer calculations and spectral and wavelength-integrated measurements. Low emittance in the interval 0.2 to 0.4 can be obtained simultaneously in both thermal atmospheric windows: 3 to 5 and 8 to 13 µm. These results are relevant for IR signature control. The sample consisted of a 0.9-µm Si and a 2.45-µm SiO2 layer on a Si wafer. The layers were grown by standard microelectronic chemical vapor deposition techniques. The key mechanism for lowering the emittance is the interaction between the SiO2 molecular reflectance band, around 9 µm, and interference effects in the double layer. Interference gives one peak in the 3- to 5-µm window, and a widening and strengthening of the SiO2 molecular reflectance band in the 8- to 13-µm window. The calculated spectra are in very good agreement with measured near-normal incidence reflectance spectra in the range 2.7 to 12.5 µm. The emittance of the samples heated to 61°C was determined in the atmospheric windows using two heat cameras filtered for the respective intervals and equipped with polarizers. Emittance values for the sample in the two windows and the two main polarizations were determined as a function of emission angle from 10 to 60 deg. Qualitative agreement with values calculated from tabulated optical constants was obtained.
Herman Hogstrom, Göran Forssell, Carl Gustaf Ribbing, "Realization of selective low emittance in both thermal atmospheric windows," Optical Engineering 44(2), 026001 (1 February 2005). https://doi.org/10.1117/1.1839887
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