1 April 2005 Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4
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Optical Engineering, 44(4), 043801 (2005). doi:10.1117/1.1883698
Abstract
Amorphous silicon germanium (a-Si1–xGex) thin films are prepared by low-frequency plasma-enhanced chemical vapor deposition (LF PECVD) on glass substrates, from SiH4+GeF4 and SiH4+GeH4. These films are deposited under capacitive discharge during 60 min, at a frequency of 110 kHz, substrate temperature of 300°C, pressure of 0.6 Torr, and power of 350 W. The germanium gas mixture composition, determined by XGe=[GeF4]([GeH4])/[SiH4]+[GeF4]([GeH4]), is varied from 0 to 1. These films are deposited from a (1–XGe)SiH4+(XGe)GeF4(GeH4) mixture, with H2 dilution. The refractive index n and absorption coefficient α are determined from transmission spectra. The optical energy gap is also determined. The influence of gas sources on the optical parameters is discussed.
Arllene Mariana Perez, Carlos Zuniga, Francisco Renero Carrillo, Alfonso Jacome Torres, "Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4," Optical Engineering 44(4), 043801 (1 April 2005). https://doi.org/10.1117/1.1883698
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