1 April 2005 Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4
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Abstract
Amorphous silicon germanium (a-Si1–xGex) thin films are prepared by low-frequency plasma-enhanced chemical vapor deposition (LF PECVD) on glass substrates, from SiH4+GeF4 and SiH4+GeH4. These films are deposited under capacitive discharge during 60 min, at a frequency of 110 kHz, substrate temperature of 300°C, pressure of 0.6 Torr, and power of 350 W. The germanium gas mixture composition, determined by XGe=[GeF4]([GeH4])/[SiH4]+[GeF4]([GeH4]), is varied from 0 to 1. These films are deposited from a (1–XGe)SiH4+(XGe)GeF4(GeH4) mixture, with H2 dilution. The refractive index n and absorption coefficient α are determined from transmission spectra. The optical energy gap is also determined. The influence of gas sources on the optical parameters is discussed.
© (2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Arllene Mariana Perez, Arllene Mariana Perez, Carlos Zuniga, Carlos Zuniga, Francisco Renero Carrillo, Francisco Renero Carrillo, Alfonso Jacome Torres, Alfonso Jacome Torres, } "Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4," Optical Engineering 44(4), 043801 (1 April 2005). https://doi.org/10.1117/1.1883698 . Submission:
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