1 May 2005 Picosecond high-repetition-rate pulsed laser ablation of dielectrics: the effect of energy accumulation between pulses
Author Affiliations +
Optical Engineering, 44(5), 051102 (2005). doi:10.1117/1.1905363
Abstract
We report experiments on the ablation of arsenic trisulphide and silicon using high-repetition-rate (megahertz) trains of picosecond pulses. In the case of arsenic trisulphide, the average single pulse fluence at ablation threshold is found to be >100 times lower when pulses are delivered as a 76-MHz train compared with the case of a solitary pulse. For silicon, however, the threshold for a 4.1-MHz train equals the value for a solitary pulse. A model of irradiation by high-repetition-rate pulse trains demonstrates that for arsenic trisulphide energy accumulates in the target surface from several hundred successive pulses, lowering the ablation threshold and causing a change from the laser-solid to laser-plasma mode as the surface temperature increases.
Barry Luther-Davies, Andrei V. Rode, Nathan R. Madsen, Eugene G. Gamaly, "Picosecond high-repetition-rate pulsed laser ablation of dielectrics: the effect of energy accumulation between pulses," Optical Engineering 44(5), 051102 (1 May 2005). http://dx.doi.org/10.1117/1.1905363
JOURNAL ARTICLE
8 PAGES


SHARE
KEYWORDS
Laser ablation

Silicon

Pulsed laser operation

Picosecond phenomena

Absorption

Chalcogenide glass

Crystals

Back to Top