1 May 2005 Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition
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Optical Engineering, 44(5), 059702 (2005). doi:10.1117/1.1907563
Abstract
A multilayered infrared Ge/Si quantum-dot photodetector is fabricated by pulsed laser deposition. Forty successive Ge quantum dot layers, each covered with a thin Si layer, are deposited. Deposition is monitored by in situ reflection high-energy electron diffraction and the morphology is further studied by ex situ atomic force microscopy. Current-voltage measurements reveal typical diode characteristics, while responsivity measurements show an absorption peak around a 2-μm wavelength
Mohammed S. Hegazy, Tamer F. Refaat, M. Nurul Abedin, Hani E. Elsayed-Ali, "Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition," Optical Engineering 44(5), 059702 (1 May 2005). http://dx.doi.org/10.1117/1.1907563
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KEYWORDS
Germanium

Silicon

Photodetectors

Pulsed laser deposition

Infrared radiation

Sensors

Infrared photography

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