1 June 2005 1.65-µm Er:Yb:YAG diode-pumped laser delivering 80-mJ pulse energy
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Optical Engineering, 44(6), 064202 (2005). doi:10.1117/1.1921708
Abstract
We demonstrate efficient lasing of bulk diode-pumped Er3+:Yb3+:YAG at 1.645 µm. The material is transversely pumped using three quasi-cw 960-nm laser diode arrays in a simple arrangement. In the free-running mode of operation, an output pulse energy of 79 mJ is obtained at 4.7 J of incident optical pump energy. The lasing threshold lies in the range 1.0 to 1.9 J in long-pulse operation, depending on pumping conditions, and optical slope efficiencies of 2.2% to 3.4% were measured with respect to the incident pump energy. Furthermore, initial Q-switching experiments with a Co:MALO saturable absorber yielded pulses of 1.7-mJ energy and 340-ns FWHM duration. As the reported laser setup also has an uncomplicated and compact design, it represents a good crystalline rare-earth candidate system with superior material qualities to compete against the established glass-host materials in the eye-safe wavelength range.
Efstratios Georgiou, Foteini Kiriakidi, Olivier Musset, Jean-Pierre Boquillon, "1.65-µm Er:Yb:YAG diode-pumped laser delivering 80-mJ pulse energy," Optical Engineering 44(6), 064202 (1 June 2005). http://dx.doi.org/10.1117/1.1921708
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KEYWORDS
Semiconductor lasers

Pulsed laser operation

Laser crystals

Crystals

Absorption

Diodes

Erbium

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