Integration of germanium waveguide photodetectors for intrachip optical interconnects

Mathieu Rouviere; Mathieu Halbwax; Jean-Luc Cercus; Eric Cassan; Laurent Vivien; Daniel Pascal; Michel Heitzmann; Jean-Michel Hartmann; Suzanne Laval

doi:10.1117/1.1950067

1 July 2005 Integration of germanium waveguide photodetectors for intrachip optical interconnects

Mathieu Rouviere, Mathieu Halbwax, Jean-Luc Cercus, Eric Cassan, Laurent Vivien, Daniel Pascal, Michel Heitzmann, Jean-Michel Hartmann, Suzanne Laval

Author Affiliations +

Optical Engineering, 44(7), 075402 (2005). https://doi.org/10.1117/1.1950067

Abstract

The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented. The epitaxial Ge layers are grown on Si(001) by reduced-pressure chemical vapor deposition. The optical absorption of Ge layers is recorded from 1.2 to 1.7 µm and linked to the layer strain. The responsivity of an interdigitated metal-semiconductor-metal Ge photodetector has been measured. Light coupling from a slightly etched submicron rib silicon-on-insulator waveguide to a Ge photodetector is studied for two configurations: butt coupling and vertical coupling.

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Mathieu Rouviere, Mathieu Halbwax, Jean-Luc Cercus, Eric Cassan, Laurent Vivien, Daniel Pascal, Michel Heitzmann, Jean-Michel Hartmann, and Suzanne Laval "Integration of germanium waveguide photodetectors for intrachip optical interconnects," Optical Engineering 44(7), 075402 (1 July 2005). https://doi.org/10.1117/1.1950067

Published: 1 July 2005

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