1 July 2005 Integration of germanium waveguide photodetectors for intrachip optical interconnects
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The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented. The epitaxial Ge layers are grown on Si(001) by reduced-pressure chemical vapor deposition. The optical absorption of Ge layers is recorded from 1.2 to 1.7 µm and linked to the layer strain. The responsivity of an interdigitated metal-semiconductor-metal Ge photodetector has been measured. Light coupling from a slightly etched submicron rib silicon-on-insulator waveguide to a Ge photodetector is studied for two configurations: butt coupling and vertical coupling.
© (2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Mathieu Rouviere, Mathieu Rouviere, Mathieu Halbwax, Mathieu Halbwax, Jean-Luc Cercus, Jean-Luc Cercus, Eric Cassan, Eric Cassan, Laurent Vivien, Laurent Vivien, Daniel Pascal, Daniel Pascal, Michel Heitzmann, Michel Heitzmann, Jean-Michel Hartmann, Jean-Michel Hartmann, Suzanne Laval, Suzanne Laval, } "Integration of germanium waveguide photodetectors for intrachip optical interconnects," Optical Engineering 44(7), 075402 (1 July 2005). https://doi.org/10.1117/1.1950067 . Submission:

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