1 January 2006 Design realization and characterization of a position sensitive detector for fast optical measurement
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Abstract
The fabrication and testing results of a 65-pin ceramic packaged 4×4 arrayed position sensitive detector are presented. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-in. <111> n-type high resistance crystal silicon substrates. A 100-nm antireflection SiO2 thin film is formed on the surface, along with a multilayer cover glass with transmissivity >98% from 400 to 950 nm. Primary tests of the device show that it has a low dark current, high spectral sensitivity, very fast response speed, and very good linearity. The dark current of an element unit is less than 20 nA, which is the allowable maximum dark current. The peak spectral sensitivity of the sensor is over 505 mA/W at 800-nm wavelength. Its response time is 8 ns at 45-V reverse bias and the nonlinearity of the total sensitive area is less than 1%.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Xun Jun Qu, Bin Lin, Dongyan Chen, Xiangqun Cao, Yu Qing Chen, "Design realization and characterization of a position sensitive detector for fast optical measurement," Optical Engineering 45(1), 014402 (1 January 2006). https://doi.org/10.1117/1.2151807 . Submission:
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