1 January 2006 Electro-optic modulator based on Si2N2O substrate
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Optical Engineering, 45(1), 014603 (2006). doi:10.1117/1.2155483
Abstract
We propose a novel Z-cut lithium niobate electro-optic modulator based on a Si2N2O substrate. The structure is analyzed using the finite element method. The novel modulator with 3-dB optical bandwidth, half-wave voltage, and characteristic impedance at 1.5-µm wavelength are 120 GHz, 3.5 V and 50.2Ω, respectively. The simulation results show that the modulator can achieve wide bandwidth, low half-wave voltage, and a good impedance match. The modulator has good potential for high-speed optical transmission systems.
Jiusheng Li, Sailing He, "Electro-optic modulator based on Si2N2O substrate," Optical Engineering 45(1), 014603 (1 January 2006). http://dx.doi.org/10.1117/1.2155483
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KEYWORDS
Modulators

Electrodes

Silicon

Microwave radiation

Electrooptic modulators

Finite element methods

Optical engineering

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