1 January 2006 Electro-optic modulator based on Si2N2O substrate
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We propose a novel Z-cut lithium niobate electro-optic modulator based on a Si2N2O substrate. The structure is analyzed using the finite element method. The novel modulator with 3-dB optical bandwidth, half-wave voltage, and characteristic impedance at 1.5-µm wavelength are 120 GHz, 3.5 V and 50.2Ω, respectively. The simulation results show that the modulator can achieve wide bandwidth, low half-wave voltage, and a good impedance match. The modulator has good potential for high-speed optical transmission systems.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jiusheng Li, Jiusheng Li, Sailing He, Sailing He, } "Electro-optic modulator based on Si2N2O substrate," Optical Engineering 45(1), 014603 (1 January 2006). https://doi.org/10.1117/1.2155483 . Submission:

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