1 December 2006 Optical properties of amorphous hydrogenated silicon nitride thin films
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Optical Engineering, 45(12), 123802 (2006). doi:10.1117/1.2402493
Abstract
This paper presents a study of the optical properties of amorphous hydrogenated silicon nitride (a-Si3N4:H) films under deposition temperature influence. The films were deposited by low-frequency plasma-enhanced chemical vapor deposition at temperatures of 200, 300, and 400°C and 0.6-Torr pressure. The mixture gases were silane (SiH4), ammonia (NH3), and hydrogen (H2). The optical properties of the films samples were obtained by means of the transmittance spectra and from spectroellipsometry measurements. Then, the optical parameters of the films were determined using the Swanepoel, Cauchy, and Sellmeier models. The refractive index dispersion curves were well fitted with both the Cauchy and the Sellmeier theoretical model. The equivalence between the parameters that characterize the two models is established.
Arllene Mariana Perez, Cesar Santiago, Francisco Renero Carrillo, Carlos Zuniga, "Optical properties of amorphous hydrogenated silicon nitride thin films," Optical Engineering 45(12), 123802 (1 December 2006). http://dx.doi.org/10.1117/1.2402493
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KEYWORDS
Refractive index

Optical properties

Amorphous silicon

Silicon

Silicon films

Thin films

Dispersion

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