1 March 2006 Photonic crystal beamsplitting laser diode
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Optical Engineering, 45(3), 034203 (2006). doi:10.1117/1.2185497
Abstract
A description of a novel Y-branch photonic crystal laser diode operating at 1.55 µm is presented. Optical gain calculations within an InGaAsP-InP multiple-quantum-well (MQW) gain medium predict a threshold current of 0.5 mA, which is lower than a typical ridge laser. The resonant structure of the beamsplitting laser is modeled using a scattering matrix approach incorporating the effects of multiple internal reflections on the cavity mode structure and mode spacing. Phase-matching conditions are derived, taking into account all the different resonant substructures. The results from the phase-matching analysis show an operating mode that reduces threshold current beyond that of a geometrically similar conventional ridge laser. This Y-branch photonic crystal laser, when cascaded as a multichannel resonant structure, produces numerous optical intensity levels that can be used in an optical analog-to-digital converter (ADC).
Michael T. Reilly, Wenli Huang, Faquir C. Jain, "Photonic crystal beamsplitting laser diode," Optical Engineering 45(3), 034203 (1 March 2006). http://dx.doi.org/10.1117/1.2185497
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KEYWORDS
Photonic crystals

Semiconductor lasers

Laser damage threshold

Waveguides

Optical engineering

Phase shifts

Gallium

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