1 March 2006 High-power AlGaInP laser diodes with current-injection-free region near the laser facet
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Optical Engineering, 45(3), 034205 (2006). doi:10.1117/1.2185567
Abstract
A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 °C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW.
Yun Xu, Yuzhang Li, Qiaoqiang Gan, Qing Cao, Guofeng Song, Liang Guo, Lianghui Chen, "High-power AlGaInP laser diodes with current-injection-free region near the laser facet," Optical Engineering 45(3), 034205 (1 March 2006). http://dx.doi.org/10.1117/1.2185567
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KEYWORDS
Aluminium gallium indium phosphide

Semiconductor lasers

High power lasers

Continuous wave operation

Chemical vapor deposition

Cladding

Gallium

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